AP6G04S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6G04S
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.67 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.2 nS
Cossⓘ - Capacitancia de salida: 76 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET AP6G04S
Principales características: AP6G04S
ap6g04s.pdf
AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS D R
ap6g03s.pdf
AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS D R
ap6g03li.pdf
AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.8A DS D R
Otros transistores... AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , 20N50 , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF .
Liste
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