All MOSFET. AP6G04S Datasheet

 

AP6G04S Datasheet and Replacement


   Type Designator: AP6G04S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOP8
 

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AP6G04S Datasheet (PDF)

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AP6G04S

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS DR

Datasheet: AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , IRF530 , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF .

History: AP70N03DF | 4N60G-TF3-T | FDC638P | IRF9Z22 | FDC6506P | JMSH0401PG

Keywords - AP6G04S MOSFET datasheet

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