AP80N08D Todos los transistores

 

AP80N08D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80N08D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO252
 

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AP80N08D Datasheet (PDF)

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 ap80n08d.pdf pdf_icon

AP80N08D

AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR

 7.1. Size:3601K  cn apm
 ap80n08nf.pdf pdf_icon

AP80N08D

AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR

 8.1. Size:570K  1
 ap80n04q.pdf pdf_icon

AP80N08D

 8.2. Size:1965K  1
 ap80n04g.pdf pdf_icon

AP80N08D

MOSTRAR MÁS

Otros transistores... AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , NCEP15T14 , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , AP10H03S .

History: AP8P06S | AP10N04S | JMSH0401PGQ | TF202THC | AP80N06D | AP15P04S | AP50P02DF

 

 
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