AP80N08D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP80N08D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.2 nS
Cossⓘ - Capacitancia de salida: 410 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO252
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AP80N08D Datasheet (PDF)
ap80n08d.pdf
AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR
ap80n08nf.pdf
AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR
Otros transistores... AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , NCEP15T14 , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , , , .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: APG12N10D | AP90N06D | AP8P10S | AP80P01NF | AP80N08NF | AP80N08D | AP70N03DF | AP6G04S | AP50N06DF | AP3404MI | AP130N20MP | AP60N02BD | AP50N06Y | AP50N03S | AP4N06SI | AP3416AI
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