AP80N08D Datasheet. Specs and Replacement
Type Designator: AP80N08D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.2 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
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AP80N08D datasheet
..1. Size:2412K cn apm
ap80n08d.pdf 
AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R ... See More ⇒
7.1. Size:3601K cn apm
ap80n08nf.pdf
AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R ... See More ⇒
8.3. Size:175K ape
ap80n03gp.pdf
AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low... See More ⇒
8.9. Size:1395K cn apm
ap80n07f.pdf
AP80N07F 68V N-Channel Enhancement Mode MOSFET Description The AP80N07F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
8.10. Size:1135K cn apm
ap80n02nf.pdf
AP80N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80A DS D R ... See More ⇒
8.11. Size:1548K cn apm
ap80n07p ap80n07t.pdf
AP80N07PIT 68V N-Channel Enhancement Mode MOSFET Description The AP80N07P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
8.12. Size:2631K cn apm
ap80n06d.pdf
AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒
8.13. Size:1459K cn apm
ap80n07d.pdf
AP80N07D 68V N-Channel Enhancement Mode MOSFET Description The AP80N07D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
8.14. Size:2440K cn apm
ap80n06nf.pdf
AP80N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP80N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80A DS D R ... See More ⇒
8.15. Size:1838K cn apm
ap80n03df.pdf
AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒
8.16. Size:1216K cn apm
ap80n03d.pdf
AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R ... See More ⇒
8.17. Size:1407K cn apm
ap80n04df.pdf
AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒
8.18. Size:2217K cn apm
ap80n02df.pdf
AP80N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80 A DS D R ... See More ⇒
8.19. Size:1583K cn apm
ap80n03nf.pdf
AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒
8.20. Size:1651K cn apm
ap80n04d.pdf
AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒
Detailed specifications: AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, IRF2807, AP80N08NF, AP80P01NF, AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S
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