AP10G04DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP10G04DF
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.67 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.8(7.5) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.2(15.7) nS
Cossⓘ - Capacitancia de salida: 76(134) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026(0.045) Ohm
Paquete / Cubierta: PDFN3X3-8L
Búsqueda de reemplazo de MOSFET AP10G04DF
Principales características: AP10G04DF
ap10g04df.pdf
AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R
ap10g04s.pdf
AP10G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R
ap10g03s.pdf
AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS D R
ap10g06nf.pdf
AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R
Otros transistores... AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , 75N75 , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D .
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