AP10G04DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10G04DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.67 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.8(7.5) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2(15.7) nS

Cossⓘ - Capacitancia de salida: 76(134) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026(0.045) Ohm

Encapsulados: PDFN3X3-8L

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AP10G04DF datasheet

 ..1. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G04DF

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

 7.1. Size:2001K  cn apm
 ap10g04s.pdf pdf_icon

AP10G04DF

AP10G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

 8.1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G04DF

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS D R

 8.2. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G04DF

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R

MOSTRAR MÁS

Otros transistores... AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, AP8P10S, AP90N06D, APG12N10D, 75N75, AP10H03DF, AP10H03S, AP15P04S, AP3400MI, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D