All MOSFET. AP10G04DF Datasheet

 

AP10G04DF Datasheet and Replacement


   Type Designator: AP10G04DF
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.8(7.5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2(15.7) nS
   Cossⓘ - Output Capacitance: 76(134) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026(0.045) Ohm
   Package: PDFN3X3-8L
 

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AP10G04DF Datasheet (PDF)

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AP10G04DF

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

Datasheet: AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , K2611 , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D .

History: IRFBA35N60C

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