AP3400MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3400MI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AP3400MI
Principales características: AP3400MI
ap3400mi.pdf
AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R
ap3400mi-l.pdf
AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R
Otros transistores... AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , IRF1405 , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S , AP10N04S , AP15G04NF .
History: SSU70R600S2
History: SSU70R600S2
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