AP3400MI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3400MI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT23

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AP3400MI datasheet

 ..1. Size:2282K  cn apm
 ap3400mi.pdf pdf_icon

AP3400MI

AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 0.1. Size:1265K  cn apm
 ap3400mi-l.pdf pdf_icon

AP3400MI

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 8.1. Size:1869K  allpower
 ap3400.pdf pdf_icon

AP3400MI

 8.2. Size:1290K  allpower
 ap3400s.pdf pdf_icon

AP3400MI

MOSTRAR MÁS

Otros transistores... AP80P01NF, AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, IRF1405, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF