AP3400MI Datasheet. Specs and Replacement
Type Designator: AP3400MI 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT23
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AP3400MI substitution
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AP3400MI datasheet
ap3400mi.pdf
AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒
ap3400mi-l.pdf
AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R ... See More ⇒
Detailed specifications: AP80P01NF, AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, IRF1405, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF
Keywords - AP3400MI MOSFET specs
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