AP15G04NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15G04NF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21(18) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.8 nS

Cossⓘ - Capacitancia de salida: 107 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017(0.045) Ohm

Encapsulados: PDFN5X6-8L

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AP15G04NF datasheet

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AP15G04NF

AP15G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP15G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =21A DS D R

 8.1. Size:1771K  cn apm
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AP15G04NF

AP15G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R

 8.2. Size:2641K  cn apm
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AP15G04NF

AP15G03DF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =19.3A DS D R

Otros transistores... AP3400MI, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AON7403, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF