AP15G04NF Datasheet. Specs and Replacement

Type Designator: AP15G04NF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21(18) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.8 nS

Cossⓘ - Output Capacitance: 107 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017(0.045) Ohm

Package: PDFN5X6-8L

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AP15G04NF datasheet

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AP15G04NF

AP15G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP15G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =21A DS D R ... See More ⇒

 8.1. Size:1771K  cn apm
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AP15G04NF

AP15G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R ... See More ⇒

 8.2. Size:2641K  cn apm
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AP15G04NF

AP15G03DF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =19.3A DS D R ... See More ⇒

Detailed specifications: AP3400MI, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AON7403, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF

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