AP15G04NF Spec and Replacement
Type Designator: AP15G04NF
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21(18) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 107 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017(0.045) Ohm
Package: PDFN5X6-8L
AP15G04NF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP15G04NF Specs
ap15g04nf.pdf
AP15G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP15G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =21A DS D R ... See More ⇒
ap15g03nf.pdf
AP15G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R ... See More ⇒
ap15g03df.pdf
AP15G03DF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =19.3A DS D R ... See More ⇒
Detailed specifications: AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S , AP10N04S , AON7403 , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , AP8P06S , AP90N08NF .
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