AP10G04S Todos los transistores

 

AP10G04S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10G04S
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.8(7.5) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.2(15.7) nS
   Cossⓘ - Capacitancia de salida: 76(134) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026(0.045) Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET AP10G04S

 

Principales características: AP10G04S

 ..1. Size:2001K  cn apm
 ap10g04s.pdf pdf_icon

AP10G04S

AP10G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

 7.1. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G04S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

 8.1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G04S

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS D R

 8.2. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G04S

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R

MOSTRAR MÁS

Otros transistores... AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AO4468 , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF .

History: AP40N02D

 

 
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