All MOSFET. AP10G04S Datasheet

 

AP10G04S Datasheet and Replacement


   Type Designator: AP10G04S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.8(7.5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2(15.7) nS
   Cossⓘ - Output Capacitance: 76(134) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026(0.045) Ohm
   Package: SOP8
 

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AP10G04S Datasheet (PDF)

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AP10G04S

AP10G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

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AP10G04S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

Datasheet: AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , AP8P06S , AP90N08NF , IRF730 , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF .

History: AP10G04DF

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