DMN3052LSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN3052LSS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 555 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET DMN3052LSS

DMN3052LSS Datasheet (PDF)

..1. Size:170K diodes
dmn3052lss.pdf

DMN3052LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 30m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020

6.1. Size:159K diodes
dmn3052l.pdf

DMN3052LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

6.2. Size:91K tysemi
dmn3052l.pdf

Product specificationDMN3052LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

8.1. Size:193K diodes
dmn3051l.pdf

DMN3051LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)

8.2. Size:346K diodes
dmn3053l.pdf

DMN3053LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = 10V 4.0 A 30V Fast Switching Speed 50m @ VGS = 4.5V 3.5A Low Input/Output Leakage ESD Protected GateDescription Totally Lead-Free & Fully RoHS Co

8.3. Size:135K diodes
dmn3050s.pdf

DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T

8.4. Size:111K diodes
dmn3051ldm.pdf

DMN3051LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-26 38 m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 64 m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low

8.5. Size:132K diodes
dmn3050s-7.pdf

8.6. Size:100K tysemi
dmn3051l.pdf

Product specification DMN3051LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 38m @ VGS = -10V 5.8A Fast Switching Speed 30V Low Input/Output Leakage 64m @ VGS = -4.5V 4.5A Lead-Free Finish; RoHS compliant (Note 1)

Otros transistores... DMN3030LSS , DMN3031LSS , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM , DMN3052L , 75N75 , DMN3112S , DMN3112SSS , DMN3115UDM , DMN3150L , DMN3150LW , DMN3200U , DMN32D2LDF , DMN32D2LFB4 .

Liste

Recientemente añadidas las descripciónes de los transistores: