All MOSFET. DMN3052LSS Datasheet

 

DMN3052LSS MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN3052LSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 7.1 A
   Cossⓘ - Output Capacitance: 555 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO8

 DMN3052LSS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN3052LSS Datasheet (PDF)

 ..1. Size:170K  diodes
 dmn3052lss.pdf

DMN3052LSS DMN3052LSS

DMN3052LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 30m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020

 6.1. Size:159K  diodes
 dmn3052l.pdf

DMN3052LSS DMN3052LSS

DMN3052LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

 6.2. Size:91K  tysemi
 dmn3052l.pdf

DMN3052LSS DMN3052LSS

Product specificationDMN3052LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

 8.1. Size:193K  diodes
 dmn3051l.pdf

DMN3052LSS DMN3052LSS

DMN3051LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)

 8.2. Size:346K  diodes
 dmn3053l.pdf

DMN3052LSS DMN3052LSS

DMN3053LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = 10V 4.0 A 30V Fast Switching Speed 50m @ VGS = 4.5V 3.5A Low Input/Output Leakage ESD Protected GateDescription Totally Lead-Free & Fully RoHS Co

 8.3. Size:135K  diodes
 dmn3050s.pdf

DMN3052LSS DMN3052LSS

DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T

 8.4. Size:111K  diodes
 dmn3051ldm.pdf

DMN3052LSS DMN3052LSS

DMN3051LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-26 38 m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 64 m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low

 8.5. Size:132K  diodes
 dmn3050s-7.pdf

DMN3052LSS DMN3052LSS

DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T

 8.6. Size:100K  tysemi
 dmn3051l.pdf

DMN3052LSS DMN3052LSS

Product specification DMN3051LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 38m @ VGS = -10V 5.8A Fast Switching Speed 30V Low Input/Output Leakage 64m @ VGS = -4.5V 4.5A Lead-Free Finish; RoHS compliant (Note 1)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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