AP4957A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4957A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.8 nS

Cossⓘ - Capacitancia de salida: 194 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SOP8

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AP4957A datasheet

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AP4957A

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS D R

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AP4957A

AP4957AGM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best com

 0.2. Size:178K  ape
 ap4957agm.pdf pdf_icon

AP4957A

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de

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 ap4957gm.pdf pdf_icon

AP4957A

AP4957GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 24m D1 D1 Dual P MOSFET Package ID -7.7A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the b

MOSTRAR MÁS

Otros transistores... AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, IRFZ44N, AP65N06D, AP65N06DF, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650