AP4957A Datasheet. Specs and Replacement

Type Designator: AP4957A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.8 nS

Cossⓘ - Output Capacitance: 194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

  📄📄 Copy 

AP4957A substitution

- MOSFET ⓘ Cross-Reference Search

 

AP4957A datasheet

 ..1. Size:1931K  cn apm
 ap4957a.pdf pdf_icon

AP4957A

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS D R ... See More ⇒

 0.1. Size:95K  ape
 ap4957agm-hf.pdf pdf_icon

AP4957A

AP4957AGM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best com... See More ⇒

 0.2. Size:178K  ape
 ap4957agm.pdf pdf_icon

AP4957A

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de... See More ⇒

 8.1. Size:72K  ape
 ap4957gm.pdf pdf_icon

AP4957A

AP4957GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 24m D1 D1 Dual P MOSFET Package ID -7.7A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the b... See More ⇒

SHOW MORE

Detailed specifications: AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, IRFZ44N, AP65N06D, AP65N06DF, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650

Keywords - AP4957A MOSFET specs

 AP4957A cross reference

 AP4957A equivalent finder

 AP4957A pdf lookup

 AP4957A substitution

 AP4957A replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.