AP4957A - Даташиты. Аналоги. Основные параметры

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS D R

AP4957AGM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best com

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de

AP4957GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 24m D1 D1 Dual P MOSFET Package ID -7.7A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the b