AP65N06DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65N06DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 199.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PDFN3X3-8L

  📄📄 Copiar 

 Búsqueda de reemplazo de AP65N06DF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP65N06DF datasheet

 ..1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N06DF

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 6.1. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N06DF

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 7.1. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N06DF

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 8.1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N06DF

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R

MOSTRAR MÁS

Otros transistores... AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, IRF740, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650, APJ30N65F, APJ30N65P