All MOSFET. AP65N06DF Datasheet

 

AP65N06DF Datasheet and Replacement


   Type Designator: AP65N06DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 199.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN3X3-8L
 

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AP65N06DF Datasheet (PDF)

 ..1. Size:1817K  cn apm
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AP65N06DF

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

 6.1. Size:1844K  cn apm
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AP65N06DF

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

Datasheet: AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , IRF740 , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P .

History: AP10G04DF | AP80P01NF

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