AP65N06DF - аналоги и даташиты транзистора

 

AP65N06DF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP65N06DF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 199.5 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: PDFN3X3-8L

 Аналог (замена) для AP65N06DF

 

AP65N06DF Datasheet (PDF)

 ..1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N06DF

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 6.1. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N06DF

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 7.1. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N06DF

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 8.1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N06DF

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , IRF740 , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P .

History: SML80T27 | SST90R900S2

 

 
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