AP6G03S Todos los transistores

 

AP6G03S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6G03S
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10(7.6) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.8(20.2) nS
   Cossⓘ - Capacitancia de salida: 81(148) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.042) Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET AP6G03S

 

Principales características: AP6G03S

 ..1. Size:2445K  cn apm
 ap6g03s.pdf pdf_icon

AP6G03S

AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS D R

 8.1. Size:1723K  cn apm
 ap6g03li.pdf pdf_icon

AP6G03S

AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.8A DS D R

 9.1. Size:3407K  cn apm
 ap6g04s.pdf pdf_icon

AP6G03S

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS D R

Otros transistores... AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , IRF840 , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q

 

 

 
Back to Top

 

Popular searches

hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913

 


 
.