AP6G03S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6G03S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10(7.6) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.8(20.2) nS

Cossⓘ - Capacitancia de salida: 81(148) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.042) Ohm

Encapsulados: SOP8

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AP6G03S datasheet

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 ap6g03s.pdf pdf_icon

AP6G03S

AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS D R

 8.1. Size:1723K  cn apm
 ap6g03li.pdf pdf_icon

AP6G03S

AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.8A DS D R

 9.1. Size:3407K  cn apm
 ap6g04s.pdf pdf_icon

AP6G03S

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS D R

Otros transistores... AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, AP65N06DF, IRF840, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650, APJ30N65F, APJ30N65P, APJ30N65T