All MOSFET. AP6G03S Datasheet

 

AP6G03S Datasheet and Replacement


   Type Designator: AP6G03S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10(7.6) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.8(20.2) nS
   Cossⓘ - Output Capacitance: 81(148) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.042) Ohm
   Package: SOP8
 

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AP6G03S Datasheet (PDF)

 ..1. Size:2445K  cn apm
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AP6G03S

AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS DR

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AP6G03S

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS DR

Datasheet: AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , 20N60 , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T .

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