AP6G03S Datasheet. Specs and Replacement
Type Designator: AP6G03S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10(7.6) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.8(20.2) nS
Cossⓘ - Output Capacitance: 81(148) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.042) Ohm
Package: SOP8
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AP6G03S datasheet
ap6g03s.pdf
AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS D R ... See More ⇒
ap6g03li.pdf
AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.8A DS D R ... See More ⇒
ap6g04s.pdf
AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS D R ... See More ⇒
Detailed specifications: AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, AP65N06DF, IRF840, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650, APJ30N65F, APJ30N65P, APJ30N65T
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