AP6P04S Todos los transistores

 

AP6P04S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6P04S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOP8
 

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AP6P04S Datasheet (PDF)

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AP6P04S

AP6P04S -40V P-Channel Enhancement Mode MOSFET Description The AP6P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-6.0A DS DR

 9.1. Size:181K  ape
 ap6p064i.pdf pdf_icon

AP6P04S

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 9.2. Size:168K  ape
 ap6p064j.pdf pdf_icon

AP6P04S

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 9.3. Size:182K  ape
 ap6p070i.pdf pdf_icon

AP6P04S

AP6P070IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

MOSTRAR MÁS

Otros transistores... AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , IRF840 , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F .

 

 
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