AP6P04S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6P04S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 6
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23
nS
Cossⓘ - Capacitancia
de salida: 65
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065
Ohm
Paquete / Cubierta:
SOP8
Búsqueda de reemplazo de MOSFET AP6P04S
Principales características: AP6P04S
..1. Size:1762K cn apm
ap6p04s.pdf 
AP6P04S -40V P-Channel Enhancement Mode MOSFET Description The AP6P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-6.0A DS D R
9.1. Size:181K ape
ap6p064i.pdf
AP6P064I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
9.2. Size:168K ape
ap6p064j.pdf
AP6P064J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and G D silicon process technology to achieve the low
9.3. Size:182K ape
ap6p070i.pdf
AP6P070I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16A G RoHS Compliant & Halogen-Free S Description AP6P070 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
9.4. Size:204K ape
ap6p064h.pdf
AP6P064H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l
9.5. Size:205K ape
ap6p070h.pdf
AP6P070H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free S Description AP6P070 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l
9.6. Size:165K ape
ap6p070p.pdf
AP6P070P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free S Description AP6P070 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
9.7. Size:204K ape
ap6p090h.pdf
AP6P090H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP6P090 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l
9.8. Size:169K ape
ap6p090j.pdf
AP6P090J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP6P090 series are from Advanced Power innovated design and G D silicon process technology to achieve the low
9.9. Size:67K ape
ap6p025m.pdf
AP6P025M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID3 -7.3A G RoHS Compliant & Halogen-Free S Description D D AP6P025 series are from Advanced Power innovated design and silicon D D process technology to achieve
9.10. Size:204K ape
ap6p025h.pdf
AP6P025H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and G D silicon process technology to achieve the low
9.11. Size:177K ape
ap6p025s.pdf
AP6P025S Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
9.12. Size:186K ape
ap6p090m.pdf
AP6P090M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID3 -4A G RoHS Compliant & Halogen-Free S Description D D AP6P090 series are from Advanced Power innovated design and silicon D D process technology to achieve t
9.13. Size:165K ape
ap6p025p.pdf
AP6P025P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
9.14. Size:144K ape
ap6p064jb.pdf
AP6P064JB Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
9.15. Size:71K ape
ap6p070s.pdf
AP6P070S Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free S Description AP6P070 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
9.16. Size:182K ape
ap6p025i.pdf
AP6P025I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -26.8A G RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.17. Size:1170K cn apm
ap6p03si.pdf
AP6P03SI -30V P-Channel Enhancement Mode MOSFET Description The AP6P03SI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-6A DS D R
9.18. Size:1467K cn apm
ap6p06mi.pdf
AP6P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP6P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-6A DS D R
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