All MOSFET. AP6P04S Datasheet

 

AP6P04S Datasheet and Replacement


   Type Designator: AP6P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP8
 

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AP6P04S Datasheet (PDF)

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AP6P04S

AP6P04S -40V P-Channel Enhancement Mode MOSFET Description The AP6P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-6.0A DS DR

 9.1. Size:181K  ape
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AP6P04S

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 9.2. Size:168K  ape
 ap6p064j.pdf pdf_icon

AP6P04S

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 9.3. Size:182K  ape
 ap6p070i.pdf pdf_icon

AP6P04S

AP6P070IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

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Datasheet: AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , IRF840 , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F .

History: AP70H06NF | 4N65L-TF3-T

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