AP01P10I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP01P10I  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.8 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: SOT23

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AP01P10I datasheet

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AP01P10I

AP01P10I -100V P-Channel Enhancement Mode MOSFET Description The AP01P10I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS D R

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AP01P10I

http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw

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