All MOSFET. AP01P10I Datasheet

 

AP01P10I Datasheet and Replacement


   Type Designator: AP01P10I
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOT23
 

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AP01P10I Datasheet (PDF)

 ..1. Size:1294K  cn apm
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AP01P10I

AP01P10I -100V P-Channel Enhancement Mode MOSFET Description The AP01P10I uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR

 9.1. Size:704K  ncepower
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AP01P10I

http://www.ncepower.comNCEAP01P35AKNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw

Datasheet: APJ50N65P , APJ50N65T , AP65R190 , APN9N50D , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AON6414A , AP100N03AD , AP100N03D , AP100N03P , AP100N03T , AP100N03Y , AP100N04D , AP100N04NF , AP100N08D .

History: 2SJ541

Keywords - AP01P10I MOSFET datasheet

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