AP01P10I MOSFET Datasheet: P-Ch, 100V, 0.9A. Full specification with pinout and replacement list

AP01P10I Specs and Replacement

   Type Designator: AP01P10I
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOT23

AP01P10I substitution

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AP01P10I datasheet

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AP01P10I -100V P-Channel Enhancement Mode MOSFET Description The AP01P10I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS D R ... See More ⇒

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http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw... See More ⇒

Detailed specifications: APJ50N65P , APJ50N65T , AP65R190 , APN9N50D , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , IRFB4115 , AP100N03AD , AP100N03D , AP100N03P , AP100N03T , AP100N03Y , AP100N04D , AP100N04NF , AP100N08D .