AP01P10I Datasheet. Specs and Replacement

Type Designator: AP01P10I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: SOT23

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AP01P10I datasheet

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AP01P10I

AP01P10I -100V P-Channel Enhancement Mode MOSFET Description The AP01P10I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS D R ... See More ⇒

 9.1. Size:704K  ncepower
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AP01P10I

http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw... See More ⇒

Detailed specifications: APJ50N65P, APJ50N65T, AP65R190, APN9N50D, APJ14N65D, APJ14N65F, APJ14N65P, APJ14N65T, IRFB4115, AP100N03AD, AP100N03D, AP100N03P, AP100N03T, AP100N03Y, AP100N04D, AP100N04NF, AP100N08D

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