AP10P10D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP10P10D datasheet

..1. Size:1578K cn apm
ap10p10d.pdf pdf_icon

AP10P10D -100V P-Channel Enhancement Mode MOSFET Description The AP10P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-10A DS D R

7.1. Size:101K ape
ap10p10gh j-hf.pdf pdf_icon

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switch

7.2. Size:201K ape
ap10p10gj.pdf pdf_icon

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switchi

7.3. Size:54K ape
ap10p10gk-hf.pdf pdf_icon

AP10P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100V D Lower Gate Charge RDS(ON) 500m S Fast Switching Characteristic ID - 1.65A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP10P10 series are from Advanced Power innovated design and silicon process technology