AP10P10D Datasheet. Specs and Replacement

Type Designator: AP10P10D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.7 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO252

  📄📄 Copy 

AP10P10D substitution

- MOSFET ⓘ Cross-Reference Search

 

AP10P10D datasheet

 ..1. Size:1578K  cn apm
ap10p10d.pdf pdf_icon

AP10P10D

AP10P10D -100V P-Channel Enhancement Mode MOSFET Description The AP10P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-10A DS D R ... See More ⇒

 7.1. Size:101K  ape
ap10p10gh j-hf.pdf pdf_icon

AP10P10D

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switch... See More ⇒

 7.2. Size:201K  ape
ap10p10gj.pdf pdf_icon

AP10P10D

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switchi... See More ⇒

 7.3. Size:54K  ape
ap10p10gk-hf.pdf pdf_icon

AP10P10D

AP10P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100V D Lower Gate Charge RDS(ON) 500m S Fast Switching Characteristic ID - 1.65A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP10P10 series are from Advanced Power innovated design and silicon process technology ... See More ⇒

Detailed specifications: AP10N06S, AP10N10D, AP10N10S, AP10N15D, AP10N65F, AP10N65P, AP10P04D, AP10P06MSI, K3569, AP120N04P, AP120N04T, AP120N06P, AP120N06T, AP120N08P, AP120N08T, AP12N40F, AP12N40P

Keywords - AP10P10D MOSFET specs

 AP10P10D cross reference

 AP10P10D equivalent finder

 AP10P10D pdf lookup

 AP10P10D substitution

 AP10P10D replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility