AP150N03P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP150N03P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 86.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 31.6 nC
trⓘ - Tiempo de subida: 49 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP150N03P MOSFET
AP150N03P Datasheet (PDF)
ap150n03p ap150n03t.pdf
AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR
ap150n03d.pdf
AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR
ap150n03nf.pdf
AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS DR
ap150n04d.pdf
AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR
Otros transistores... AP120N06P , AP120N06T , AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , IRF9640 , AP150N03T , AP150N10P , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P .
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