AP150N03P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP150N03P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 86.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220

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AP150N03P datasheet

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 ap150n03p ap150n03t.pdf pdf_icon

AP150N03P

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

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AP150N03P

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AP150N03P

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AP150N03P

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

MOSTRAR MÁS

Otros transistores... AP120N06P, AP120N06T, AP120N08P, AP120N08T, AP12N40F, AP12N40P, AP12N65F, AP12N65P, IRL3713, AP150N03T, AP150N10P, AP150N10T, AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P