AP150N03P Datasheet. Specs and Replacement

Type Designator: AP150N03P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

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AP150N03P datasheet

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 ap150n03p ap150n03t.pdf pdf_icon

AP150N03P

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒

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AP150N03P

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AP150N03P

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AP150N03P

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒

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Detailed specifications: AP120N06P, AP120N06T, AP120N08P, AP120N08T, AP12N40F, AP12N40P, AP12N65F, AP12N65P, IRL3713, AP150N03T, AP150N10P, AP150N10T, AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P

Keywords - AP150N03P MOSFET specs

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