AP150N03P Specs and Replacement
Type Designator: AP150N03P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
AP150N03P substitution
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AP150N03P datasheet
ap150n03p ap150n03t.pdf
AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒
ap150n03d.pdf
AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒
Detailed specifications: AP120N06P , AP120N06T , AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , IRF1405 , AP150N03T , AP150N10P , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P .
History: AP3400DI
Keywords - AP150N03P MOSFET specs
AP150N03P cross reference
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AP150N03P substitution
AP150N03P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP3400DI
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