AP150N03P - аналоги и даташиты транзистора

 

AP150N03P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP150N03P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 86.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 31.6 nC
   tr ⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP150N03P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP150N03P Datasheet (PDF)

 ..1. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150N03P

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.1. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N03P

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.2. Size:1263K  cn apm
 ap150n03nf.pdf pdf_icon

AP150N03P

AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS DR

 7.1. Size:1281K  cn apm
 ap150n04d.pdf pdf_icon

AP150N03P

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP120N06P , AP120N06T , AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , IRF9640 , AP150N03T , AP150N10P , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P .

History: AP12N65P

 

 
Back to Top

 


 
.