AP200N12T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP200N12T Datasheet (PDF)

..1. Size:1498K cn apm
ap200n12p ap200n12t.pdf pdf_icon

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type135V I =200A DS DR

7.1. Size:1577K cn apm
ap200n15mp.pdf pdf_icon

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

7.2. Size:1629K cn apm
ap200n15tlg1.pdf pdf_icon

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

7.3. Size:1458K cn apm
ap200n10mp.pdf pdf_icon

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS DR

Otros transistores... AP180N03T , AP180N08P , AP180N08T , AP18N20D , AP18N20Y , AP190N15P , AP190N15T , AP200N12P , IRFZ44N , AP20N65F , AP20N65P , AP30N06P , AP30N06T , AP40N20P , AP40N20T , AP45P06F , AP45P06P .