AP200N12T datasheet, аналоги, основные параметры

Наименование производителя: AP200N12T  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 240 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 41 ns

Cossⓘ - Выходная емкость: 739 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm

Тип корпуса: TO263

  📄📄 Копировать 

Аналог (замена) для AP200N12T

- подборⓘ MOSFET транзистора по параметрам

 

AP200N12T даташит

 ..1. Size:1498K  cn apm
 ap200n12p ap200n12t.pdf pdf_icon

AP200N12T

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R

 7.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N12T

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R

 7.2. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N12T

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R

 7.3. Size:1458K  cn apm
 ap200n10mp.pdf pdf_icon

AP200N12T

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP180N03T, AP180N08P, AP180N08T, AP18N20D, AP18N20Y, AP190N15P, AP190N15T, AP200N12P, IRF3205, AP20N65F, AP20N65P, AP30N06P, AP30N06T, AP40N20P, AP40N20T, AP45P06F, AP45P06P