AP200N12T MOSFET Datasheet: N-Ch, 120V, 200A. Full specification with pinout and replacement list

AP200N12T Specs and Replacement

Type Designator: AP200N12T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 739 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

AP200N12T substitution

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AP200N12T datasheet

..1. Size:1498K cn apm
ap200n12p ap200n12t.pdf pdf_icon

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R ... See More ⇒

7.1. Size:1577K cn apm
ap200n15mp.pdf pdf_icon

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R ... See More ⇒

7.2. Size:1629K cn apm
ap200n15tlg1.pdf pdf_icon

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R ... See More ⇒

7.3. Size:1458K cn apm
ap200n10mp.pdf pdf_icon

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS D R ... See More ⇒

Detailed specifications: AP180N03T , AP180N08P , AP180N08T , AP18N20D , AP18N20Y , AP190N15P , AP190N15T , AP200N12P , IRFZ44N , AP20N65F , AP20N65P , AP30N06P , AP30N06T , AP40N20P , AP40N20T , AP45P06F , AP45P06P .