All MOSFET. AP200N12T Datasheet

 

AP200N12T Datasheet and Replacement


   Type Designator: AP200N12T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

 AP200N12T substitution

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AP200N12T Datasheet (PDF)

 ..1. Size:1498K  cn apm
ap200n12p ap200n12t.pdf pdf_icon

AP200N12T

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type135V I =200A DS DR

 7.1. Size:1577K  cn apm
ap200n15mp.pdf pdf_icon

AP200N12T

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 7.2. Size:1629K  cn apm
ap200n15tlg1.pdf pdf_icon

AP200N12T

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 7.3. Size:1458K  cn apm
ap200n10mp.pdf pdf_icon

AP200N12T

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS DR

Datasheet: AP180N03T , AP180N08P , AP180N08T , AP18N20D , AP18N20Y , AP190N15P , AP190N15T , AP200N12P , IRFZ44N , AP20N65F , AP20N65P , AP30N06P , AP30N06T , AP40N20P , AP40N20T , AP45P06F , AP45P06P .

History: AP18N20Y

Keywords - AP200N12T MOSFET datasheet

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