AP200N12T Datasheet. Specs and Replacement

Type Designator: AP200N12T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 739 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

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AP200N12T datasheet

 ..1. Size:1498K  cn apm
 ap200n12p ap200n12t.pdf pdf_icon

AP200N12T

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R ... See More ⇒

 7.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N12T

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R ... See More ⇒

 7.2. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N12T

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R ... See More ⇒

 7.3. Size:1458K  cn apm
 ap200n10mp.pdf pdf_icon

AP200N12T

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS D R ... See More ⇒

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Detailed specifications: AP180N03T, AP180N08P, AP180N08T, AP18N20D, AP18N20Y, AP190N15P, AP190N15T, AP200N12P, IRF3205, AP20N65F, AP20N65P, AP30N06P, AP30N06T, AP40N20P, AP40N20T, AP45P06F, AP45P06P

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