AP45P06F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP45P06F
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23.6 nS
Cossⓘ - Capacitancia de salida: 224 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de AP45P06F MOSFET
AP45P06F datasheet
ap45p06f ap45p06p ap45p06t.pdf
AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R
ap45p06d.pdf
AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R
ap45p06nf.pdf
AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R
Otros transistores... AP200N12P , AP200N12T , AP20N65F , AP20N65P , AP30N06P , AP30N06T , AP40N20P , AP40N20T , 50N06 , AP45P06P , AP45P06T , AP4N65D , AP4N65Y , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY .
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