AP45P06F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP45P06F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23.6 nS

Cossⓘ - Capacitancia de salida: 224 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO220F

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AP45P06F datasheet

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 ap45p06f ap45p06p ap45p06t.pdf pdf_icon

AP45P06F

AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

 7.1. Size:1659K  cn apm
 ap45p06d.pdf pdf_icon

AP45P06F

AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

 7.2. Size:1635K  cn apm
 ap45p06nf.pdf pdf_icon

AP45P06F

AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

Otros transistores... AP200N12P, AP200N12T, AP20N65F, AP20N65P, AP30N06P, AP30N06T, AP40N20P, AP40N20T, IRF540N, AP45P06P, AP45P06T, AP4N65D, AP4N65Y, AP4N65F, AP4N65P, AP50N06BD, AP50N06BY