AP45P06F datasheet, аналоги, основные параметры

Наименование производителя: AP45P06F  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 52.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 23.6 ns

Cossⓘ - Выходная емкость: 224 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm

Тип корпуса: TO220F

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Аналог (замена) для AP45P06F

- подборⓘ MOSFET транзистора по параметрам

 

AP45P06F даташит

 ..1. Size:1894K  cn apm
 ap45p06f ap45p06p ap45p06t.pdf pdf_icon

AP45P06F

AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

 7.1. Size:1659K  cn apm
 ap45p06d.pdf pdf_icon

AP45P06F

AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

 7.2. Size:1635K  cn apm
 ap45p06nf.pdf pdf_icon

AP45P06F

AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

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