All MOSFET. AP45P06F Datasheet

 

AP45P06F Datasheet and Replacement


   Type Designator: AP45P06F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO220F
 

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AP45P06F Datasheet (PDF)

 ..1. Size:1894K  cn apm
ap45p06f ap45p06p ap45p06t.pdf pdf_icon

AP45P06F

AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS DR

 7.1. Size:1659K  cn apm
ap45p06d.pdf pdf_icon

AP45P06F

AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS DR

 7.2. Size:1635K  cn apm
ap45p06nf.pdf pdf_icon

AP45P06F

AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS DR

Datasheet: AP200N12P , AP200N12T , AP20N65F , AP20N65P , AP30N06P , AP30N06T , AP40N20P , AP40N20T , 50N06 , AP45P06P , AP45P06T , AP4N65D , AP4N65Y , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY .

History: AP30N06P

Keywords - AP45P06F MOSFET datasheet

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