AP80P06P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP80P06P 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: TO220
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AP80P06P datasheet
ap80p06p ap80p06t.pdf
AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R
ap80p06d.pdf
AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
ap80p06nf.pdf
AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
Otros transistores... AP7N65D, AP7N65Y, AP7N65F, AP7N65P, AP80N07P, AP80N07T, AP80N10P, AP80N10T, 13N50, AP80P06T, AP80P10P, AP80P10T, AP85N08BP, AP85N08BT, AP90N06P, AP90N06T, AP9N90F
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AP7N65P | AP60N03T | AP60N03F | AP70P03P
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