AP80P06P Datasheet. Specs and Replacement

Type Designator: AP80P06P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

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AP80P06P datasheet

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 ap80p06p ap80p06t.pdf pdf_icon

AP80P06P

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R ... See More ⇒

 7.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P06P

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R ... See More ⇒

 7.2. Size:1789K  cn apm
 ap80p06nf.pdf pdf_icon

AP80P06P

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R ... See More ⇒

 8.1. Size:508K  allpower
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AP80P06P

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Detailed specifications: AP7N65D, AP7N65Y, AP7N65F, AP7N65P, AP80N07P, AP80N07T, AP80N10P, AP80N10T, 13N50, AP80P06T, AP80P10P, AP80P10T, AP85N08BP, AP85N08BT, AP90N06P, AP90N06T, AP9N90F

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