AP120N04D Todos los transistores

 

AP120N04D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP120N04D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 899 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: TO252
 

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AP120N04D datasheet

 ..1. Size:1486K  cn apm
 ap120n04d.pdf pdf_icon

AP120N04D

AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

 6.1. Size:680K  allpower
 ap120n04k.pdf pdf_icon

AP120N04D

 6.2. Size:1322K  cn apm
 ap120n04p ap120n04t.pdf pdf_icon

AP120N04D

AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

 6.3. Size:1545K  cn apm
 ap120n04t.pdf pdf_icon

AP120N04D

MOSTRAR MÁS

Otros transistores... AP90N06T , AP9N90F , AP9N90P , AP9N90T , AP110N04D , AP120N02D , AP120N03D , AP120N03NF , AON7506 , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S , AP13P06D , AP13P06Y .

 

 

 


 
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