AP120N04D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP120N04D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 899 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm

Encapsulados: TO252

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AP120N04D datasheet

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AP120N04D

AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

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AP120N04D

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AP120N04D

AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

 6.3. Size:1545K  cn apm
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AP120N04D

MOSTRAR MÁS

Otros transistores... AP90N06T, AP9N90F, AP9N90P, AP9N90T, AP110N04D, AP120N02D, AP120N03D, AP120N03NF, AO4407A, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, AP12P04S, AP13P06D, AP13P06Y