AP120N04D Datasheet. Specs and Replacement

Type Designator: AP120N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 899 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO252

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AP120N04D datasheet

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AP120N04D

AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒

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AP120N04D

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AP120N04D

AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒

 6.3. Size:1545K  cn apm
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AP120N04D

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Detailed specifications: AP90N06T, AP9N90F, AP9N90P, AP9N90T, AP110N04D, AP120N02D, AP120N03D, AP120N03NF, AO4407A, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, AP12P04S, AP13P06D, AP13P06Y

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