AP80N04D Todos los transistores

 

AP80N04D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80N04D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 193 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO252
 

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AP80N04D datasheet

 ..1. Size:1651K  cn apm
 ap80n04d.pdf pdf_icon

AP80N04D

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

 0.1. Size:1407K  cn apm
 ap80n04df.pdf pdf_icon

AP80N04D

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

 7.1. Size:570K  1
 ap80n04q.pdf pdf_icon

AP80N04D

 7.2. Size:1965K  1
 ap80n04g.pdf pdf_icon

AP80N04D

MOSTRAR MÁS

Otros transistores... APG130N06NF , AP7P15D , AP7P15Y , AP80N02DF , AP80N02NF , AP80N03D , AP80N03DF , AP80N03NF , IRF3205 , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , AP150N03D .

History: 2P985B-2

 

 

 


 
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