AP80N04D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80N04D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.6 nS

Cossⓘ - Capacitancia de salida: 193 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO252

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AP80N04D datasheet

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AP80N04D

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

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AP80N04D

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R

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AP80N04D

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AP80N04D

MOSTRAR MÁS

Otros transistores... APG130N06NF, AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF, AP80N03D, AP80N03DF, AP80N03NF, IRFZ44N, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF, AP80P06D, AP150N03D