AP80N04D Datasheet. Specs and Replacement

Type Designator: AP80N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

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AP80N04D datasheet

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AP80N04D

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒

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AP80N04D

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒

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AP80N04D

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AP80N04D

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Detailed specifications: APG130N06NF, AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF, AP80N03D, AP80N03DF, AP80N03NF, IRFZ44N, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF, AP80P06D, AP150N03D

Keywords - AP80N04D MOSFET specs

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