All MOSFET. AP80N04D Datasheet

 

AP80N04D Datasheet and Replacement


   Type Designator: AP80N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

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AP80N04D Datasheet (PDF)

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AP80N04D

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR

 0.1. Size:1407K  cn apm
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AP80N04D

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR

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AP80N04D

 7.2. Size:1965K  1
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AP80N04D

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Datasheet: APG130N06NF , AP7P15D , AP7P15Y , AP80N02DF , AP80N02NF , AP80N03D , AP80N03DF , AP80N03NF , IRF3205 , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , AP150N03D .

History: UF740 | 2SK2674 | HUF76629D3S | HUF76609D3S

Keywords - AP80N04D MOSFET datasheet

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