AP150N03D Todos los transistores

 

AP150N03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP150N03D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 155 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 725 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO252
 

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AP150N03D Datasheet (PDF)

 ..1. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N03D

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.1. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150N03D

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.2. Size:1263K  cn apm
 ap150n03nf.pdf pdf_icon

AP150N03D

AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS DR

 7.1. Size:1281K  cn apm
 ap150n04d.pdf pdf_icon

AP150N03D

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

MOSTRAR MÁS

Otros transistores... AP80N04D , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , IRFZ44 , AP150N03NF , AP150N04D , AP150P03NF , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D .

 

 
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