AP150N03D Specs and Replacement

Type Designator: AP150N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 155 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO252

AP150N03D substitution

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AP150N03D datasheet

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AP150N03D

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒

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AP150N03D

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AP150N03D

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AP150N03D

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒

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Detailed specifications: AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D, AP80P04NF, AP80P06D, IRFZ44, AP150N03NF, AP150N04D, AP150P03NF, AP15G03DF, AP15G03NF, AP15N02S, AP15N06S, AP15N10D

Keywords - AP150N03D MOSFET specs

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