AP150N03D - аналоги и даташиты транзистора

 

AP150N03D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP150N03D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 89.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 155 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6.3 ns
   Cossⓘ - Выходная емкость: 725 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP150N03D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP150N03D Datasheet (PDF)

 ..1. Size:838K  cn apm
ap150n03d.pdfpdf_icon

AP150N03D

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.1. Size:910K  cn apm
ap150n03p ap150n03t.pdfpdf_icon

AP150N03D

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 6.2. Size:1263K  cn apm
ap150n03nf.pdfpdf_icon

AP150N03D

AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS DR

 7.1. Size:1281K  cn apm
ap150n04d.pdfpdf_icon

AP150N03D

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

Другие MOSFET... AP80N04D , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D , AP80P04NF , AP80P06D , IRFZ44 , AP150N03NF , AP150N04D , AP150P03NF , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D .

History: AP50H06NF | AP50N03D | AP50N04D | AP9575GM-HF | BSZ042N04NSG | AP15N10Y

 

 
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