AP15P04D Todos los transistores

 

AP15P04D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP15P04D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.7 nS
   Cossⓘ - Capacitancia de salida: 134 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: TO252
 

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AP15P04D Datasheet (PDF)

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AP15P04D

AP15P04D -40V P-Channel Enhancement Mode MOSFET Description The AP15P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15A DS DR

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AP15P04D

AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R

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 ap15p03q.pdf pdf_icon

AP15P04D

 8.2. Size:1544K  allpower
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AP15P04D

MOSTRAR MÁS

Otros transistores... AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y , AP15N12D , 2N7000 , AP15P06D , AP2300AI , AP2300MI , AP2301BI , AP2302CI , AP2305AI , AP2305BI , AP2305MI .

History: ELM3C0660A | SED8840 | AP200N10MP | 2SJ649

 

 
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