AP15P04D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15P04D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.7 nS

Cossⓘ - Capacitancia de salida: 134 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm

Encapsulados: TO252

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AP15P04D datasheet

 ..1. Size:1538K  cn apm
 ap15p04d.pdf pdf_icon

AP15P04D

AP15P04D -40V P-Channel Enhancement Mode MOSFET Description The AP15P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15A DS D R

 7.1. Size:2066K  cn apm
 ap15p04s.pdf pdf_icon

AP15P04D

AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R

 8.1. Size:1544K  1
 ap15p03q.pdf pdf_icon

AP15P04D

 8.2. Size:1544K  allpower
 ap15p03q.pdf pdf_icon

AP15P04D

MOSTRAR MÁS

Otros transistores... AP15G03NF, AP15N02S, AP15N06S, AP15N10D, AP15N10D-L, AP15N10S, AP15N10Y, AP15N12D, 2N7000, AP15P06D, AP2300AI, AP2300MI, AP2301BI, AP2302CI, AP2305AI, AP2305BI, AP2305MI