AP15P04D - Даташиты. Аналоги. Основные параметры

AP15P04D -40V P-Channel Enhancement Mode MOSFET Description The AP15P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15A DS DR

AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS DR

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS DR