AP15P04D Specs and Replacement
Type Designator: AP15P04D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.7 nS
Cossⓘ - Output Capacitance: 134 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO252
AP15P04D substitution
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AP15P04D datasheet
ap15p04d.pdf
AP15P04D -40V P-Channel Enhancement Mode MOSFET Description The AP15P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15A DS D R ... See More ⇒
ap15p04s.pdf
AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R ... See More ⇒
Detailed specifications: AP15G03NF, AP15N02S, AP15N06S, AP15N10D, AP15N10D-L, AP15N10S, AP15N10Y, AP15N12D, 2N7000, AP15P06D, AP2300AI, AP2300MI, AP2301BI, AP2302CI, AP2305AI, AP2305BI, AP2305MI
Keywords - AP15P04D MOSFET specs
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