AP15P04D Datasheet and Replacement
Type Designator: AP15P04D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15.7 nS
Cossⓘ - Output Capacitance: 134 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO252
AP15P04D substitution
AP15P04D Datasheet (PDF)
ap15p04d.pdf

AP15P04D -40V P-Channel Enhancement Mode MOSFET Description The AP15P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15A DS DR
ap15p04s.pdf

AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R
Datasheet: AP15G03NF , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y , AP15N12D , IRFP250N , AP15P06D , , , , , , , .
History: STD15N06LT4
Keywords - AP15P04D MOSFET datasheet
AP15P04D cross reference
AP15P04D equivalent finder
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History: STD15N06LT4



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MOSFET: AP15P06D | AP15P04D | AP15N12D | AP15N10Y | AP15N10S | AP15N10D-L | AP15N10D | AP15N06S | AP15N02S | AP15G03NF | AP15G03DF | AP150P03NF | AP150N04D | AP150N03NF | AP150N03D | AP80P06D
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