AP15P06D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15P06D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19.8 nS

Cossⓘ - Capacitancia de salida: 97.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: TO252

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AP15P06D datasheet

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AP15P06D

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS D R

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AP15P06D

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS D R

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 ap15p03q.pdf pdf_icon

AP15P06D

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AP15P06D

MOSTRAR MÁS

Otros transistores... AP15N02S, AP15N06S, AP15N10D, AP15N10D-L, AP15N10S, AP15N10Y, AP15N12D, AP15P04D, P55NF06, AP2300AI, AP2300MI, AP2301BI, AP2302CI, AP2305AI, AP2305BI, AP2305MI, AP2307AI