AP15P06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15P06D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19.8 nS
Cossⓘ - Capacitancia de salida: 97.3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de AP15P06D MOSFET
AP15P06D Datasheet (PDF)
ap15p06d.pdf

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS DR
ap15p06df.pdf

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS DR
Otros transistores... AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y , AP15N12D , AP15P04D , 2SK3878 , , , , , , , , .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP15P06D | AP15P04D | AP15N12D | AP15N10Y | AP15N10S | AP15N10D-L | AP15N10D | AP15N06S | AP15N02S | AP15G03NF | AP15G03DF | AP150P03NF | AP150N04D | AP150N03NF | AP150N03D | AP80P06D
Popular searches
mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188